The Global market for IGBT (Insulated Gate Bipolar Transistor) and super junction MOSFET (Metal-oxide Semiconductor Field Effect Transistor) was valued USD 4,776.2 million in 2012 and is expected to grow at a CAGR of 11.6% during the forecast period 2013 – 2019.
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The market is estimated to reach USD 10,100.0 million by 2019. Increasing focus on improving energy efficiency in electrical and electronic product designs, driven by regulatory pressure is expected to drive the growth of this market over the coming years. In 2012, Asia Pacific was the largest regional market for IGBT and super junction MOSFETs in terms of revenue, accounting for around 39% share of the total global market. Asia Pacific is also the fastest growing market for IGBT and super junction MOSFETs with its proliferating electronics manufacturing industry led by developments in China, South Korea and Taiwan.
In 2012, IGBT modules held around 64% revenue share of the total market, while the rest was held by discrete IGBTs. While growth of the IGBT modules segment is driven by increasing demand from photovoltaic inverters and electric and hybrid vehicles, discrete IGBTs are experiencing increasing demand from the consumer electronics sector. The industrial applications segment was the leading application area for IGBT in 2012 in terms of revenue generation, followed by the motor drives application segment. The electric and hybrid electric vehicles (EV/HEV) application area for IGBT is anticipated to be the fastest growing segment during the forecast period, growing at a CAGR of 21.1%. The converters, chargers and adapters application area was the leading segment for super junction MOSFETs in 2012, followed by the others (servers, networking equipment, etc.) segment. Like IGBT, the electric and hybrid electric vehicles (EV/HEV) application segment for super junction MOSFETs is anticipated to be the fastest growing application area, growing at a CAGR of 30% during the forecast period 2013 – 2019.
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Mitsubishi Electric Corporation was the market leader for IGBT, followed by Infineon Technologies AG, in 2012. For super junction MOSFETs, Infineon Technologies AG was the market leader in 2012, in terms of percentage share. The top two players accounted for more than 85% share of the total market for super junction MOSFETs in 2012. Other key players in the IGBT and super junction MOSFET market include Fairchild Semiconductor International, Inc., STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor Device, Ltd., Toshiba Corporation, Vishay Intertechnology, Inc., Fuji Electric Co. Ltd., and Semikron, Inc.
The global IGBT and super junction MOSFET market is segmented as below:
IGBT and Super Junction MOSFET Market, By Product Type
- Discrete IGBT
- IGBT module
- Super junction MOSFET
- Discrete super junction MOSFET
- Super junction MOSFET module
IGBT and Super Junction MOSFET Market, By Application
- Uninterrupted power supply (UPS)
- Wind turbines
- Photovoltaic (PV) inverter
- Rail traction
- Consumer applications
- Electric vehicles/hybrid electric vehicles (EV/HEV)
- Motor drives
- Industrial applications
- Converters, adapters and chargers
- Others (servers, telecom and networking devices, etc.)
IGBT and Super Junction MOSFET Market, By Geography
- North America
- Asia Pacific
- Rest of the World (RoW)
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